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| MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24BK * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 E2 B2 6 B2X C2E1 E2 E2 480.25 62 30 B1 E1 C1 10.5 6 15 B1X 9 C2E1 E2 C1 14 8 15.3 25 25 21.5 8 1.8 B1X E1 B1 3-M6 3 17 8 17 8 17 3 Tab#110, t=0.5 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 150 150 1000 8 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1,96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=150A, IB=200mA -IC=150A (diode forward voltage) IC=150A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=150A, IB1=0.3A, -IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 100 4.0 4.0 1.8 -- 2.5 15 3.0 0.125 0.6 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 250 Tj=25C DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 4 5 7 10 1 Tj=25C Tj=125C VCE=10V IB=0.6A COLLECTOR CURRENT IC (A) IB=200mA 150 DC CURRENT GAIN hFE 200 IB=400mA VCE=4V 100 IB=40mA 50 IB=20mA 0 0 1 2 3 4 5 2 3 4 5 7 10 2 2 34 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 3 2 Tj=25C VCE=4V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 VBE(sat) BASE CURRENT IB (A) SATURATION VOLTAGE 10 0 7 5 4 3 2 10 -1 7 5 4 3 2.6 VCE(sat) IB=200mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 3.0 3.4 3.8 4.2 4.6 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 4 IC=200A 3 IC=150A 2 IC=100A SWITCHING TIME 10 1 7 5 4 3 2 ts 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 4 5 7 10 1 10 0 7 tf 5 4 3 ton 2 10 1 2 3 4 5 7 10 2 VCC=600V IB1=0.3A -IB2=3A Tj=25C Tj=125C 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 320 SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 COLLECTOR CURRENT IC (A) ts, tf (s) ts 280 240 200 160 120 80 40 0 0 Tj=125C -IB2=3A 200 400 600 800 1000 1200 1400 tf VCC=600V IC=150A IB1=300mA Tj=25C Tj=125C 3 4 5 7 10 1 2 3 4 5 7 10 2 23 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 100s 1ms DC 200s 50s 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 0.16 0.14 0.12 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Zth (j-c) (C/ W) 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 0.8 1.2 1.6 Tj=25C Tj=125C 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 Irr (A), Qrr (c) 10 2 7 5 3 2 10 2 Irr Qrr 1000 10 1 trr (s) Feb.1999 500 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 10 0 7 VCC=600V trr 5 IB1=0.3A 3 -IB2=3A Tj=25C 2 Tj=125C 0 10 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) |
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